CDBJSC5650-G
Part NoCDBJSC5650-G
ManufacturerComchip Technology
DescriptionDIODE SIL CARBIDE 650V 5A TO220F
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)5A
Voltage-Forward(Vf)(Max)@If1.7 V @ 5 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)100 µA @ 650 V
Current-ReverseLeakage@Vr430pF @ 0V, 1MHz
Capacitance@VrThrough Hole
FTO-220-2 Full Pack
MountingTypeTO-220F
Package/Case-55°C ~ 175°C
SupplierDevicePackage0 ns
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
3366
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3478 | |
| 10 | 2.3008 | |
| 100 | 2.2304 | |
| 1000 | 2.16 | |
| 10000 | 2.0661 |
Associated Product
