CC-C2-B15-0322
Part NoCC-C2-B15-0322
ManufacturerCoolCAD
DescriptionSiC Power MOSFET 1200V 12A
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C12A (Ta)
DriveVoltage(MaxRdsOn15V
MinRdsOn)135mOhm @ 10A, 15V
RdsOn(Max)@Id3.2V @ 5mA
Vgs40 nC @ 15 V
Vgs(th)(Max)@Id+15V, -5V
Vgs(Max)1810 pF @ 200 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature100W (Tc)
PowerDissipation(Max)-40°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8990
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.19 | |
| 10 | 8.0262 | |
| 100 | 7.7805 | |
| 1000 | 7.5348 | |
| 10000 | 7.2072 |
Associated Product
