![BC856AS-7](/media/Discrete%20Semiconductor%20Products/Transistors/31%25257ESOT363%25257E%25257E6.jpg)
Specification
RoHSCompliant
MountSurface Mount
Width1.35 mm
Height1 mm
Length2.2 mm
Weight6.010099 mg
hFE Min125
PolarityPNP
Frequency100 MHz
Lead FreeLead Free
REACH SVHCNo SVHC
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-363
Number of Pins6
Contact PlatingTin
Power Dissipation200 mW
Number of Elements2
Radiation HardeningNo
Transition Frequency100 MHz
Element ConfigurationDual
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Power Dissipation200 mW
Gain Bandwidth Product100 MHz
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Emitter Base Voltage (VEBO)5 V
Collector Base Voltage (VCBO)80 V
Collector Emitter Voltage (VCEO)65 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage-250 mV
In Stock:
24796
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.2996 | |
10 | 0.2936 | |
100 | 0.2846 | |
1000 | 0.2756 | |
10000 | 0.2636 |