FDB8160
Part NoFDB8160
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 30V 80A D2PAK
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C80A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.8mOhm @ 80A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs243 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)11825 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature254W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AB
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8340
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.955 | |
| 10 | 1.9159 | |
| 100 | 1.8573 | |
| 1000 | 1.7986 | |
| 10000 | 1.7204 |
Associated Product
