FQI7N60TU
Part NoFQI7N60TU
ManufacturerFairchild Semiconductor
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 7
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C7.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1Ohm @ 3.7A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs38 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1430 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 142W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK (TO-262)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15751
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3348 | |
| 10 | 1.3081 | |
| 100 | 1.2681 | |
| 1000 | 1.228 | |
| 10000 | 1.1746 |
Associated Product
