SFW9610TM

SFW9610TM

Part NoSFW9610TM
DescriptionPower Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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ECAD Module SFW9610TM
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Specification
RoHSCompliant
Fall Time12 ns
Rise Time20 ns
Resistance3 Ω
Case/PackageTO-263
Power Dissipation3.1 W
Turn-Off Delay Time27 ns
Element ConfigurationSingle
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3 Ω
Gate to Source Voltage (Vgs)30 V
Continuous Drain Current (ID)-1.75 A
Drain to Source Breakdown Voltage-200 V
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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