FMV30N60S1
Part NoFMV30N60S1
ManufacturerFuji Electric
DescriptionPower Field-Effect Transistor,
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Width4.4958 mm
Height15.0114 mm
Length9.9822 mm
REACH SVHCUnknown
Number of Pins3
Power Dissipation90 W
Threshold Voltage3 V
Turn-On Delay Time31 ns
Turn-Off Delay Time136 ns
Element ConfigurationSingle
Max Power Dissipation90 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance125 mΩ
Gate to Source Voltage (Vgs)30 V
Continuous Drain Current (ID)30 A
Drain to Source Voltage (Vdss)600 V
Drain to Source Breakdown Voltage600 V
In Stock:
6880
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.19 | |
| 10 | 4.1062 | |
| 100 | 3.9805 | |
| 1000 | 3.8548 | |
| 10000 | 3.6872 |
Associated Product
LM2903VDR2G
ON Semiconductor
ON SEMICONDUCTOR - LM2903VDR2G - PRECISION COMPARATOR, DUAL, 1.5 uS, SOIC-8
ON Semiconductor
ON SEMICONDUCTOR - LM2903VDR2G - PRECISION COMPARATOR, DUAL, 1.5 uS, SOIC-8
