GA03JT12-247

Part NoGA03JT12-247

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 3A TO247AB

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Specification

PackageTube

Series-

ProductStatusObsolete

FETType-

TechnologySiC (Silicon Carbide Junction Transistor)

DraintoSourceVoltage(Vdss)1200 V

Current-ContinuousDrain(Id)@25°C3A (Tc) (95°C)

DriveVoltage(MaxRdsOn-

MinRdsOn)460mOhm @ 3A

RdsOn(Max)@Id-

Vgs-

Vgs(th)(Max)@Id-

Vgs(Max)-

InputCapacitance(Ciss)(Max)@Vds15W (Tc)

FETFeature175°C (TJ)

PowerDissipation(Max)Through Hole

OperatingTemperatureTO-247AB

MountingTypeTO-247-3

SupplierDevicePackage-

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 7757
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