GA50JT17-247
Part NoGA50JT17-247
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1700V 100A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)100A (Tc)
Current-ContinuousDrain(Id)@25°C25mOhm @ 50A
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id583W (Tc)
Vgs175°C (TJ)
Vgs(th)(Max)@IdThrough Hole
Vgs(Max)TO-247
InputCapacitance(Ciss)(Max)@VdsTO-247-3
FETFeature1700 V
PowerDissipation(Max)-
OperatingTemperature-
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4618
available for immediate sale in a store
available for immediate sale in a store
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Associated Product
