GB20SLT12-247
Part NoGB20SLT12-247
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SIL CARB 1.2KV 20A TO247-2
Datasheet
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Specification
PackageBulk
Series-
ProductStatusObsolete
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)1200 V
Current-AverageRectified(Io)20A
Voltage-Forward(Vf)(Max)@If2 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)200 µA @ 1200 V
Current-ReverseLeakage@Vr968pF @ 1V, 1MHz
Capacitance@VrThrough Hole
FTO-247-2
MountingTypeTO-247-2
Package/Case-55°C ~ 175°C
SupplierDevicePackage0 ns
OperatingTemperature-Junction-
Grade-
Qualification
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available for immediate sale in a store
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