MSRT200120A
Part NoMSRT200120A
ManufacturerGeneSiC Semiconductor
DescriptionDIODE MODULE GP 1.2KV 3TOWER
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
DiodeConfiguration1 Pair Common Cathode
TechnologyStandard
Voltage-DCReverse(Vr)(Max)1200 V
Current-AverageRectified(Io)(perDiode)200A (DC)
Voltage-Forward(Vf)(Max)@If1.2 V @ 200 A
SpeedStandard Recovery >500ns, > 200mA (Io)
ReverseRecoveryTime(trr)10 µA @ 600 V
Current-ReverseLeakage@Vr-40°C ~ 175°C
OperatingTemperature-JunctionChassis Mount
MountingTypeThree Tower
Package/CaseThree Tower
SupplierDevicePackage-
Grade
Qualification
In Stock:
22608
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 41.121 | |
| 10 | 40.2986 | |
| 100 | 39.0649 | |
| 1000 | 37.8313 | |
| 10000 | 36.1865 |
Associated Product
