MURT20060R
Part NoMURT20060R
ManufacturerGeneSiC Semiconductor
DescriptionDIODE MODULE GP 600V 100A 3TOWER
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
DiodeConfiguration1 Pair Common Anode
TechnologyStandard
Voltage-DCReverse(Vr)(Max)600 V
Current-AverageRectified(Io)(perDiode)100A
Voltage-Forward(Vf)(Max)@If1.7 V @ 100 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)160 ns
Current-ReverseLeakage@Vr25 µA @ 50 V
OperatingTemperature-Junction-55°C ~ 150°C
MountingTypeChassis Mount
Package/CaseThree Tower
SupplierDevicePackageThree Tower
Grade-
Qualification-
In Stock:
4684
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 74.0605 | |
| 10 | 72.5793 | |
| 100 | 70.3575 | |
| 1000 | 68.1357 | |
| 10000 | 65.1732 |
Associated Product
