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MURT40010R
Part NoMURT40010R
ManufacturerGeneSiC Semiconductor
DescriptionDIODE MODULE GP 100V 200A 3TOWER
Datasheet
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Specification
PackageBulk
Series-
ProductStatusActive
DiodeConfiguration1 Pair Common Anode
TechnologyStandard
Voltage-DCReverse(Vr)(Max)100 V
Current-AverageRectified(Io)(perDiode)200A
Voltage-Forward(Vf)(Max)@If1.3 V @ 200 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)25 µA @ 50 V
Current-ReverseLeakage@Vr-55°C ~ 150°C
OperatingTemperature-Junction-
MountingType-
Package/CaseChassis Mount
SupplierDevicePackageThree Tower
GradeThree Tower
Qualification125 ns
In Stock:
4836
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 96.9144 | |
10 | 94.9761 | |
100 | 92.0687 | |
1000 | 89.1612 | |
10000 | 85.2847 |