G3S06502D
Part NoG3S06502D
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARBIDE 650V 9A TO263
Datasheet
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ECAD Module
Specification
PackageCut Tape (CT),Tape & Box (TB)
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)9A
Voltage-Forward(Vf)(Max)@If1.7 V @ 2 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)50 µA @ 650 V
Current-ReverseLeakage@Vr123pF @ 0V, 1MHz
Capacitance@VrSurface Mount
FTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MountingTypeTO-263
Package/Case-55°C ~ 175°C
SupplierDevicePackage0 ns
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
3422
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1631 | |
| 10 | 2.1198 | |
| 100 | 2.0549 | |
| 1000 | 1.9901 | |
| 10000 | 1.9035 |
Associated Product
