G3S06504C
Part NoG3S06504C
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARB 650V 11.5A TO252
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)11.5A
Voltage-Forward(Vf)(Max)@If1.7 V @ 4 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)0 ns
Current-ReverseLeakage@Vr50 µA @ 650 V
Capacitance@Vr181pF @ 0V, 1MHz
FSurface Mount
MountingTypeTO-252-3, DPak (2 Leads + Tab), SC-63
Package/CaseTO-252
SupplierDevicePackage-55°C ~ 175°C
OperatingTemperature-Junction
Grade
Qualification
In Stock:
2634
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.1408 | |
| 10 | 3.078 | |
| 100 | 2.9838 | |
| 1000 | 2.8895 | |
| 10000 | 2.7639 |
Associated Product
