G3S06520H
Part NoG3S06520H
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARB 650V 26A TO220F
Datasheet
Download Now!
ECAD Module
Specification
PackageCut Tape (CT),Tape & Box (TB)
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)26A
Voltage-Forward(Vf)(Max)@If1.7 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)0 ns
Current-ReverseLeakage@Vr50 µA @ 650 V
Capacitance@Vr1170pF @ 0V, 1MHz
FThrough Hole
MountingTypeTO-220-2 Full Pack
Package/CaseTO-220F
SupplierDevicePackage-55°C ~ 175°C
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
3492
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.7193 | |
| 10 | 9.5249 | |
| 100 | 9.2333 | |
| 1000 | 8.9418 | |
| 10000 | 8.553 |
Associated Product
