G4S12020P
Part NoG4S12020P
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIC 1.2KV 64.5A TO247AC
Datasheet
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ECAD Module
Specification
PackageCut Tape (CT),Tape & Box (TB)
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)1200 V
Current-AverageRectified(Io)64.5A
Voltage-Forward(Vf)(Max)@If1.7 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)0 ns
Current-ReverseLeakage@Vr50 µA @ 1200 V
Capacitance@Vr2600pF @ 0V, 1MHz
F-
MountingType-
Package/CaseThrough Hole
SupplierDevicePackageTO-247-2
OperatingTemperature-JunctionTO-247AC
Grade-55°C ~ 175°C
Qualification
In Stock:
4288
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 31.255 | |
| 10 | 30.6299 | |
| 100 | 29.6922 | |
| 1000 | 28.7546 | |
| 10000 | 27.5044 |
Associated Product
