G5S06508HT
Part NoG5S06508HT
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARB 650V 20A TO220F
Datasheet
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ECAD Module
Specification
PackageCut Tape (CT),Tape & Box (TB)
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)20A
Voltage-Forward(Vf)(Max)@If1.5 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)50 µA @ 650 V
Current-ReverseLeakage@Vr550pF @ 0V, 1MHz
Capacitance@Vr-
F-
MountingTypeThrough Hole
Package/CaseTO-220-2 Full Pack
SupplierDevicePackageTO-220F
OperatingTemperature-Junction-55°C ~ 175°C
Grade0 ns
Qualification
In Stock:
3282
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.6458 | |
| 10 | 4.5529 | |
| 100 | 4.4135 | |
| 1000 | 4.2741 | |
| 10000 | 4.0883 |
Associated Product
