G5S6506Z
Part NoG5S6506Z
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARB 650V 30.5A 8DFN
Datasheet
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ECAD Module
Specification
PackageCut Tape (CT),Tape & Box (TB)
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)30.5A
Voltage-Forward(Vf)(Max)@If1.5 V @ 6 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)50 µA @ 650 V
Current-ReverseLeakage@Vr395pF @ 0V, 1MHz
Capacitance@Vr-
F-
MountingTypeSurface Mount
Package/Case8-PowerTDFN
SupplierDevicePackage8-DFN (4.9x5.75)
OperatingTemperature-Junction-55°C ~ 175°C
Grade0 ns
Qualification
In Stock:
13654
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.7558 | |
| 10 | 5.6407 | |
| 100 | 5.468 | |
| 1000 | 5.2953 | |
| 10000 | 5.0651 |
Associated Product
