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G16N03S
Part NoG16N03S
ManufacturerGoford Semiconductor
DescriptionN30V, 16A,RD<10M@10V,VTH1.0V~2.5
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C16A (Tc)
DriveVoltage(MaxRdsOn10mOhm @ 10A, 10V
MinRdsOn)2.5V @ 250µA
RdsOn(Max)@Id16.6 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id950 pF @ 15 V
Vgs(Max)Standard
InputCapacitance(Ciss)(Max)@Vds2.5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOP
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage5V, 10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6278
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.1212 | |
10 | 0.1188 | |
100 | 0.1151 | |
1000 | 0.1115 | |
10000 | 0.1067 |