GT088N06T
Part NoGT088N06T
ManufacturerGoford Semiconductor
DescriptionN60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSGT
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)9mOhm @ 14A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1620 pF @ 30 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10596
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2904 | |
| 10 | 0.2846 | |
| 100 | 0.2759 | |
| 1000 | 0.2672 | |
| 10000 | 0.2556 |
Associated Product
