IRF122
Part NoIRF122
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id±20V
Vgs-
Vgs(th)(Max)@Id60W (Tc)
Vgs(Max)-55°C ~ 175°C (TJ)
InputCapacitance(Ciss)(Max)@VdsThrough Hole
FETFeatureTO-3
PowerDissipation(Max)TO-204AA, TO-3
OperatingTemperature360mOhm @ 5.6A, 10V
MountingType15 nC @ 10 V
SupplierDevicePackage350 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5486
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.792 | |
| 10 | 0.7762 | |
| 100 | 0.7524 | |
| 1000 | 0.7286 | |
| 10000 | 0.697 |
Associated Product
