IRF710
Part NoIRF710
ManufacturerHarris Corporation
DescriptionPFET, 2A I(D), 400V, 3.6OHM, 1-E
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)400 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.6Ohm @ 1.1A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)135 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature36W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17329
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3526 | |
| 10 | 0.3455 | |
| 100 | 0.335 | |
| 1000 | 0.3244 | |
| 10000 | 0.3103 |
Associated Product
