IRFD123
Part NoIRFD123
ManufacturerHarris Corporation
DescriptionMOSFET N-CH 100V 1.3A 4DIP
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C1.3A (Ta)
DriveVoltage(MaxRdsOn-
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@VdsThrough Hole
FETFeature4-HVMDIP
PowerDissipation(Max)4-DIP (0.300, 7.62mm)
OperatingTemperature270mOhm @ 780mA, 10V
MountingType16 nC @ 10 V
SupplierDevicePackage360 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14417
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0092 | |
| 10 | 0.989 | |
| 100 | 0.9587 | |
| 1000 | 0.9285 | |
| 10000 | 0.8881 |
Associated Product
