IRFD1Z3
Part NoIRFD1Z3
ManufacturerHarris Corporation
DescriptionSMALL SIGNAL N-CHANNEL MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C400mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.2Ohm @ 250mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs3 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)50 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-DIP, Hexdip
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7397
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.494 | |
| 10 | 0.4841 | |
| 100 | 0.4693 | |
| 1000 | 0.4545 | |
| 10000 | 0.4347 |
Associated Product
