IRFD220
Part NoIRFD220
ManufacturerHarris Corporation
Description0.8A 200V 0.800 OHM N-CHANNEL
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C800mA (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)800mOhm @ 480mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs14 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)260 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-DIP, Hexdip, HVMDIP
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19113
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.52 | |
| 10 | 0.5096 | |
| 100 | 0.494 | |
| 1000 | 0.4784 | |
| 10000 | 0.4576 |
Associated Product
