IRFD313
Part NoIRFD313
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)350 V
Current-ContinuousDrain(Id)@25°C300mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5Ohm @ 200mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs7.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)135 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/Case4-DIP, Hexdip
GateCharge(Qg)(Max)@Vgs4-DIP (0.300, 7.62mm)
Grade
Qualification
In Stock:
4012
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9384 | |
| 10 | 0.9196 | |
| 100 | 0.8915 | |
| 1000 | 0.8633 | |
| 10000 | 0.8258 |
Associated Product
