IRFD9113
Part NoIRFD9113
ManufacturerHarris Corporation
Description-0.6A, -80V, 1.6 OHM, P-CHANNEL
Datasheet
Download Now!
ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C600mA (Ta)
DriveVoltage(MaxRdsOn-
MinRdsOn)1.6Ohm @ 300mA, 10V
RdsOn(Max)@Id-
Vgs15 nC @ 15 V
Vgs(th)(Max)@Id-
Vgs(Max)250 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperatureThrough Hole
MountingType4-DIP, Hexdip, HVMDIP
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9327
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7068 | |
| 10 | 0.6927 | |
| 100 | 0.6715 | |
| 1000 | 0.6503 | |
| 10000 | 0.622 |
Associated Product
