![RF1S23N06LE](/media/Discrete%20Semiconductor%20Products/Transistors/MFG_ISL9N302AS3.jpg)
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RF1S23N06LE
Part NoRF1S23N06LE
ManufacturerHarris Corporation
Description23A, 60V, 0.065OHM, N-CHANNEL
Datasheet
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Specification
Package423
SeriesBulk
ProductStatus-
FETTypeActive
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C60 V
DriveVoltage(MaxRdsOn23A (Tc)
MinRdsOn)5V
RdsOn(Max)@Id65mOhm @ 23A, 5V
Vgs2V @ 250µA
Vgs(th)(Max)@Id48 nC @ 10 V
Vgs(Max)±10V
InputCapacitance(Ciss)(Max)@Vds850 pF @ 25 V
FETFeature-
PowerDissipation(Max)75W (Tc)
OperatingTemperature-55°C ~ 175°C (TJ)
MountingTypeThrough Hole
SupplierDevicePackageI2PAK (TO-262)
Package/CaseTO-262-3 Long Leads, I2PAK, TO-262AA
GateCharge(Qg)(Max)@Vgs-
Grade-
Qualification
In Stock:
4383
available for immediate sale in a store
available for immediate sale in a store
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