RFH10N50

Part NoRFH10N50

ManufacturerHarris Corporation

DescriptionN-CHANNEL POWER MOSFET

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Specification

PackageBulk

Series-

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)500 V

Current-ContinuousDrain(Id)@25°C10A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)600mOhm @ 5A, 10V

RdsOn(Max)@Id4V @ 1mA

Vgs-

Vgs(th)(Max)@Id±20V

Vgs(Max)3000 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature150W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeTO-218 Isolated

SupplierDevicePackageTO-218-3 Isolated Tab, TO-218AC

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 5649
available for immediate sale in a store

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