RFP2N08
Part NoRFP2N08
ManufacturerHarris Corporation
DescriptionN-CHANNEL, MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.05Ohm @ 2A, 5V
RdsOn(Max)@Id4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id200 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds25W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220
MountingTypeTO-220-3
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7762
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2457 | |
| 10 | 0.2408 | |
| 100 | 0.2334 | |
| 1000 | 0.226 | |
| 10000 | 0.2162 |
Associated Product
