RFP6N50
Part NoRFP6N50
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.25Ohm @ 3A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)1500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8686
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5792 | |
| 10 | 1.5476 | |
| 100 | 1.5002 | |
| 1000 | 1.4529 | |
| 10000 | 1.3897 |
Associated Product
