DE475-501N44A
Part NoDE475-501N44A
ManufacturerIXYS
DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D5, 6 PIN
Datasheet
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ECAD Module
Specification
RoHSCompliant
Frequency30 MHz
Lead FreeLead Free
Rise Time5 ns
REACH SVHCNo SVHC
Number of Pins475
Power Dissipation4.5 W
Element ConfigurationSingle
Max Power Dissipation1.8 kW
Max Operating Temperature150 °C
Drain to Source Resistance130 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)48 A
Drain to Source Voltage (Vdss)500 V
Drain to Source Breakdown Voltage500 V
In Stock:
5810
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 29.28 | |
| 10 | 28.6944 | |
| 100 | 27.816 | |
| 1000 | 26.9376 | |
| 10000 | 25.7664 |
Associated Product
