IXFH20N100P

IXFH20N100P

Part NoIXFH20N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 20A TO247AD
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ECAD Module IXFH20N100P
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Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)570mOhm @ 10A, 10V
RdsOn(Max)@Id6.5V @ 1mA
Vgs126 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)7300 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature660W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AD (IXFH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 11193
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 13.5574
10 13.2863
100 12.8795
1000 12.4728
10000 11.9305
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product