IXFN200N10P
Part NoIXFN200N10P
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 200A SOT-227B
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C200A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)7.5mOhm @ 500mA, 10V
RdsOn(Max)@Id5V @ 8mA
Vgs235 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)7600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature680W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8119
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 32.9004 | |
| 10 | 32.2424 | |
| 100 | 31.2554 | |
| 1000 | 30.2684 | |
| 10000 | 28.9524 |
Associated Product
