IXFN50N120SIC
Part NoIXFN50N120SIC
ManufacturerIXYS
DescriptionSICFET N-CH 1200V 47A SOT227B
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C47A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)50mOhm @ 40A, 20V
RdsOn(Max)@Id2.4V @ 10mA
Vgs100 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)1900 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5755
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 84.47 | |
| 10 | 82.7806 | |
| 100 | 80.2465 | |
| 1000 | 77.7124 | |
| 10000 | 74.3336 |
Associated Product
