IXFN82N60Q3
Part NoIXFN82N60Q3
ManufacturerIXYS
DescriptionMOSFET N-CH 600V 66A SOT227B
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Q3 Class
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C66A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)75mOhm @ 41A, 10V
RdsOn(Max)@Id6.5V @ 8mA
Vgs275 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)13500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature960W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageChassis Mount
Package/CaseSOT-227B
GateCharge(Qg)(Max)@VgsSOT-227-4, miniBLOC
Grade
Qualification
In Stock:
5275
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 48.636 | |
| 10 | 47.6633 | |
| 100 | 46.2042 | |
| 1000 | 44.7451 | |
| 10000 | 42.7997 |
Associated Product
