IXFT20N100P
Part NoIXFT20N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 20A TO268
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)570mOhm @ 10A, 10V
RdsOn(Max)@Id6.5V @ 1mA
Vgs126 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)7300 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature660W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-268AA
SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5054
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.8537 | |
| 10 | 11.6166 | |
| 100 | 11.261 | |
| 1000 | 10.9054 | |
| 10000 | 10.4313 |
Associated Product
