IXTK200N10P
Part NoIXTK200N10P
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 200A TO264
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C200A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)7.5mOhm @ 100A, 10V
RdsOn(Max)@Id5V @ 500µA
Vgs240 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)7600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature800W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-264 (IXTK)
GateCharge(Qg)(Max)@VgsTO-264-3, TO-264AA
Grade
Qualification
In Stock:
7821
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 16.3346 | |
| 10 | 16.0079 | |
| 100 | 15.5179 | |
| 1000 | 15.0278 | |
| 10000 | 14.3744 |
Associated Product
