IXTP08N100P
Part NoIXTP08N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 800MA TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C800mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)20Ohm @ 500mA, 10V
RdsOn(Max)@Id4V @ 50µA
Vgs11.3 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)240 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature42W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5478
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.108 | |
| 10 | 3.0458 | |
| 100 | 2.9526 | |
| 1000 | 2.8594 | |
| 10000 | 2.735 |
Associated Product
