IXTP3N110
Part NoIXTP3N110
ManufacturerIXYS
DescriptionMOSFET N-CH 1100V 3A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1100 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4Ohm @ 1.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1350 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
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available for immediate sale in a store
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Associated Product
