IXTP6N100D2
Part NoIXTP6N100D2
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 6A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn2.2Ohm @ 3A, 0V
MinRdsOn)-
RdsOn(Max)@Id95 nC @ 5 V
Vgs±20V
Vgs(th)(Max)@Id2650 pF @ 25 V
Vgs(Max)Depletion Mode
InputCapacitance(Ciss)(Max)@Vds300W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220-3
MountingTypeTO-220-3
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5857
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.0171 | |
| 10 | 9.8168 | |
| 100 | 9.5162 | |
| 1000 | 9.2157 | |
| 10000 | 8.815 |
Associated Product
