IXTQ110N10P
Part NoIXTQ110N10P
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 110A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C110A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)15mOhm @ 500mA, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id3550 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds480W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-3P
MountingTypeTO-3P-3, SC-65-3
SupplierDevicePackage110 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8310
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.8698 | |
| 10 | 6.7324 | |
| 100 | 6.5263 | |
| 1000 | 6.3202 | |
| 10000 | 6.0454 |
Associated Product
