IXUC100N055
Part NoIXUC100N055
ManufacturerIXYS
DescriptionIXYS SEMICONDUCTOR IXUC100N055MOSFET Transistor, N Channel, 100 A, 55 V, 7.7 mohm, 10 V, 4 V
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Fall Time155 ns
Rise Time115 ns
REACH SVHCNo SVHC
Rds On Max7.7 mΩ
Nominal Vgs4 V
TerminationThrough Hole
Number of Pins220
Isolation Voltage2.5 kV
Power Dissipation150 W
Threshold Voltage4 V
Dual Supply Voltage55 V
Turn-Off Delay Time230 ns
Element ConfigurationSingle
Max Power Dissipation150 W
Reverse Recovery Time80 ns
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)100 A
Drain to Source Voltage (Vdss)55 V
Drain to Source Breakdown Voltage55 V
In Stock:
6547
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.38 | |
| 10 | 2.3324 | |
| 100 | 2.261 | |
| 1000 | 2.1896 | |
| 10000 | 2.0944 |
Associated Product
