MCB60I1200TZ-TUB
Part NoMCB60I1200TZ-TUB
ManufacturerIXYS
DescriptionSICFET N-CH 1.2KV 90A TO268AA
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C90A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)34mOhm @ 50A, 20V
RdsOn(Max)@Id4V @ 15mA
Vgs160 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)2790 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-40°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-268AA (D3Pak-HV)
SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3446
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 103.8652 | |
| 10 | 101.7879 | |
| 100 | 98.6719 | |
| 1000 | 95.556 | |
| 10000 | 91.4014 |
Associated Product
