IMZA120R007M1HXKSA1
Part NoIMZA120R007M1HXKSA1
ManufacturerInfineon Technologies
DescriptionSIC DISCRETE
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C225A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)9.9mOhm @ 108A, 18V
RdsOn(Max)@Id5.2V @ 47mA
Vgs220 nC @ 18 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)9170 nF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-4-8
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4607
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 85.9712 | |
| 10 | 84.2518 | |
| 100 | 81.6726 | |
| 1000 | 79.0935 | |
| 10000 | 75.6547 |
Associated Product
