IPB80N04S2H4ATMA1
Part NoIPB80N04S2H4ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 40V 80A TO263-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesOptiMOS™
ProductStatusLast Time Buy
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C80A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.7mOhm @ 80A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs148 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO263-3-2
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5800
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0092 | |
| 10 | 0.989 | |
| 100 | 0.9587 | |
| 1000 | 0.9285 | |
| 10000 | 0.8881 |
Associated Product
