IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

Part NoIPB80N06S2L11ATMA2
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 55V 80A TO263-3
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ECAD Module IPB80N06S2L11ATMA2
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesOptiMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)55 V
Current-ContinuousDrain(Id)@25°C80A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)10.7mOhm @ 40A, 10V
RdsOn(Max)@Id2V @ 93µA
Vgs80 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2075 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature158W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO263-3-2
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 7605
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 2.508
10 2.4578
100 2.3826
1000 2.3074
10000 2.207
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product