![IPB80N06S2L11ATMA2](/media/Discrete%20Semiconductor%20Products/Transistors/D%2525C2%2525B2Pak%25252CTO-263_418AA-01.jpg)
![](/mall/image/leaves_green.webp)
IPB80N06S2L11ATMA2
Part NoIPB80N06S2L11ATMA2
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 55V 80A TO263-3
Datasheet
Download Now!
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesOptiMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)55 V
Current-ContinuousDrain(Id)@25°C80A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)10.7mOhm @ 40A, 10V
RdsOn(Max)@Id2V @ 93µA
Vgs80 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2075 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature158W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO263-3-2
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7605
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.508 | |
10 | 2.4578 | |
100 | 2.3826 | |
1000 | 2.3074 | |
10000 | 2.207 |