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IPD65R1K4C6ATMA1
Part NoIPD65R1K4C6ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 3.2A TO252-3
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolMOS™ C6
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C3.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 1A, 10V
RdsOn(Max)@Id3.5V @ 100µA
Vgs10.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)225 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature28W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO252-3
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5681
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.9765 | |
10 | 0.957 | |
100 | 0.9277 | |
1000 | 0.8984 | |
10000 | 0.8593 |