IPI100N06S3-03

Part NoIPI100N06S3-03

ManufacturerInfineon

DescriptionMOSFET N-CH 55V 100A I2PAK

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Specification

Vgs(th) (Max) @ Id4V @ 230µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackagePG-TO262-3

SeriesOptiMOS™

Rds On (Max) @ Id, Vgs3.3 mOhm @ 80A, 10V

Power Dissipation (Max)300W (Tc)

PackagingTube

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Other NamesIPI100N06S303X IPI100N06S303XK SP000087992

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds21620pF @ 25V

Gate Charge (Qg) (Max) @ Vgs480nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)55V

Detailed DescriptionN-Channel 55V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3

Current - Continuous Drain (Id) @ 25°C100A (Tc)

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